- 1 - e06636a69 this ic is esd sensitive device. s pecial handling precautions are required. sony reserves the right to change products and specifications without prior notice. this information does not convey any licens e by any implication or otherwise under any patents or other right. application circuits shown, if any, are typical examples illu strating the operation of the devices. sony cannot as sume responsibility for any problems aris ing out of the use of these circuits. CXM3513ER high power dp3t switch with logic control description the CXM3513ER can be used in wireless communication systems, for example, triple-band w-cdma handsets. this ic has a decoder with 3 cmos control inputs. the sony jphemt process is used for low insertion loss and low distortion characteristic. (applications: antenna switch for cellular handsets, triple-band w-cdma) features ? low insertion loss: 0.36db @900mhz, 0.43db @1.95ghz ? 3 cmos compatible control lines package small package size: 20-pin vqfn (2.4mm 3.2mm 0.9mm) structure gaas jphemt mmic absolute maximum ratings (ta = 25 c) ? bias voltage v dd 7v ? control voltage vctl 5 v ? operating temperature topr ?35 to +85 c ? storage temperature tstg ?65 to +150 c
CXM3513ER - 2 - block diagram and pin configuration 11 15 14 13 12 16 6 2 3 4 5 1 20 17 18 19 7 10 9 8 f11 f5 f2 f6 f3 f4 f7 f8 f9 f10 f1 gnd ext gnd gnd gnd ant gnd rf2 gnd gnd v dd ctlc ctlb ctla rf3 gnd gnd gnd gnd rf1
CXM3513ER - 3 - recommended circuit 11 15 14 13 12 16 6 2 3 4 5 1 20 17 18 19 7 10 9 8 gnd ext gnd gnd gnd ant gnd rf2 gnd gnd v dd ctlc ctlb ctla rf3 gnd gnd gnd gnd rf1 1000pf c rf 1000pf c rf 1000pf c rf 22pf c rf 22pf c rf cbypass 100pf (cbypass) (100pf) (cbypass) (100pf) (cbypass) (100pf) rf port rf port rf port vctl vctl v dd vctl rf port rf port when using this ic, the following external components should be used: c rf : this capacitor is used for rf decoupling and must be used for all applications. cbypass: this capacitor is used for dc line filtering.
CXM3513ER - 4 - truth table dc bias conditions (ta = ?35 to +85 c) state ctl a ctl b ctl c mode f1 f2 f3 f4 f5 f6 f7 f8 f9 f10 f11 1 h l l ant-rf3 off on off off off off off on on off on 2 l l l ext-rf3 off off off off on off on off on off on 3 h l h ant-rf2 off off on off off off off on on on off 4 l l h ext-rf2 off off off off off on on off on on off 5 h h l ant-rf1 on off off off off off off on off on on 6 l h l ext-rf1 off off off on off off on off off on on item min. typ. max. unit vctl (h) 1.44 1.85 v dd v vctl (l) 0 ? 0.3 v v dd 2.7 2.85 3.2 v
CXM3513ER - 5 - electrical characteristic (ta = 25 c, v dd = 2.85v) item symbol state condition min. typ. max. unit insertion loss il ant-rf1 830 to 885mhz 0.36 0.56 db ext-rf1 830 to 885mhz 0.36 0.56 db ant-rf2 1750 to 1880mhz 0.39 0.64 db ext-rf2 1750 to 1880mhz 0.40 0.65 db ant-rf3 1920 to 2170mhz 0.43 0.68 db ext-rf3 1920 to 2170mhz 0.45 0.70 db isolation iso ant-rf1 830 to 885mhz 25 30 db ext-rf1 830 to 885mhz 28 33 db ant-rf2 1750 to 1880mhz 28 33 db ext-rf2 1750 to 1880mhz 25 30 db ant-rf3 1920 to 2170mhz 24 29 db ext-rf3 1920 to 2170mhz 24 29 db vswr vswr ant 50 1.1 1.4 ? ext 50 1.1 1.4 ? 1db compression input power p1db v dd = 2.85v 32 dbm switching speed tsw 5 10 us aclr aclr1 5mhz, 3.84mhz bw, *1 , *2 , *3 ?60 ?50 dbc aclr2 10mhz, 3.84mhz bw, *1 , *2 , *3 ?65 ?55 dbc harmonics 2fo *1 , *2 , *3 ?90 ?70 dbc 3fo *1 , *2 , *3 ?90 ?70 dbc bias current idd v dd = 2.85v 105 210 a control current ictl vctl (h) = 2.85v 0.1 5 a imd2 imd2_1_1 ant-rf1 fud = frx ? ftx, *4 ?107 ?97 dbm ext-rf1 fud = frx ? ftx, *4 ?105 ?95 dbm imd2_1_2 ant-rf2 fud = frx ? ftx, *5 ?105 ?95 dbm ext-rf2 fud = frx ? ftx, *5 ?105 ?95 dbm imd2_1_3 ant-rf3 fud = frx ? ftx, *6 ?110 ?100 dbm ext-rf3 fud = frx ? ftx, *6 ?107 ?97 dbm imd2_2_1 ant-rf1 fud = frx + ftx, *4 ?115 ?105 dbm ext-rf1 fud = frx + ftx, *4 ?115 ?105 dbm imd2_2_2 ant-rf2 fud = frx + ftx, *5 ?115 ?105 dbm ext-rf2 fud = frx + ftx, *5 ?110 ?100 dbm imd2_2_3 ant-rf3 fud = frx + ftx, *6 ?115 ?105 dbm ext-rf3 fud = frx + ftx, *6 ?110 ?100 dbm
CXM3513ER - 6 - *1 pin = 25dbm, vctl = 0/1.85v, v dd = 2.85v, 830 to 840mhz *2 pin = 25dbm, vctl = 0/1.85v, v dd = 2.85v, 1750 to 1785mhz *3 pin = 25dbm, vctl = 0/1.85v, v dd = 2.85v, 1920 to 1980mhz *4 pin = 20dbm, vctl = 0/1.85v, v dd = 2.85v, ftx = 830 to 840mhz, pin = ?15dbm, frx = 875 to 885mhz *5 pin = 20dbm , vctl = 0/1.85v, v dd = 2.85v, ftx = 1750 to 1785mhz, pin = ?15dbm, frx = 1845 to 1880mhz *6 pin = 20dbm , vctl = 0/1.85v, v dd = 2.85v, ftx = 1920 to 1980mhz, pin = ?15dbm, frx = 2110 to 2170mhz imd3 imd3_1_1 ant-rf1 fud = 2 ftx ? frx, *4 ?107 ?97 dbm ext-rf1 fud = 2 ftx ? frx, *4 ?107 ?97 dbm imd3_1_2 ant-rf2 fud = 2 ftx ? frx, *5 ?107 ?97 dbm ext-rf2 fud = 2 ftx ? frx, *5 ?107 ?97 dbm imd3_1_3 ant-rf3 fud = 2 ftx ? frx, *6 ?107 ?97 dbm ext-rf3 fud = 2 ftx ? frx, *6 ?107 ?97 dbm imd3_2_1 ant-rf1 fud = 2 ftx + frx, *4 ?110 ?100 dbm ext-rf1 fud = 2 ftx + frx, *4 ?110 ?100 dbm imd3_2_2 ant-rf2 fud = 2 ftx + frx, *5 ?110 ?100 dbm ext-rf2 fud = 2 ftx + frx, *5 ?110 ?100 dbm imd3_2_3 ant-rf3 fud = 2 ftx + frx, *6 ?110 ?100 dbm ext-rf3 fud = 2 ftx + frx, *6 ?110 ?100 dbm item symbol state condition min. typ. max. unit
CXM3513ER - 7 - sony corporation package outline (unit: mm) lead plating specifications item lead material copper alloy solder composition sn-bi bi:1-4wt% plating thickness 5-18m spec.
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